What is silicon carbide
Silicon carbide is a wide bandgap semiconductor material. Compared to traditional materials, silicon carbide exhibits excellent physical properties, which can help reduce the size and weight of discrete devices, modules, and even entire systems, while improving efficiency.
SiC——Si（silicon）+C（carbon）=SiC
Silicon carbide is a group IV-IV compound semiconductor material formed by C and Si elements in a 1:1 ratio, with a hardness second only to diamond. It is a semiconductor material with great development potential and also belongs to the category of high-hardness and brittle materials. The preparation process is complex and the processing difficulty is high.
Characteristics of SiC - Excellent physical properties
Forbidden band width (high temperature resistance) 1
High critical breakdown electric field (high voltage resistance) 2
High thermal conductivity (heat dissipation) 3
Saturated electron drift velocity (high switching speed) 4
1. A larger bandgap width can ensure that the material is less prone to electron transitions at high temperatures, resulting in weaker intrinsic excitations and allowing it to withstand higher operating temperatures. The bandgap width of silicon carbide is about three times that of silicon, and its theoretical working temperature can reach over 400 ℃.
2. The critical breakdown field strength refers to the electric field strength at which a material undergoes electrical breakdown. Once this value is exceeded, the material will lose its insulation performance, which in turn determines its voltage resistance. The critical breakdown field strength of silicon carbide is about 10 times that of silicon, which can withstand higher voltages and is more suitable for high-voltage devices.
3. High temperature is one of the main reasons affecting the lifespan of devices, and thermal conductivity represents the thermal conductivity of materials. The high thermal conductivity of silicon carbide can effectively conduct heat, reduce device temperature, and maintain its normal operation.
4. Saturated electron drift rate refers to the maximum directional movement speed of electrons in semiconductor materials, which determines the switching frequency of the device. The saturation electron drift rate of silicon carbide is twice that of silicon, which helps to increase the operating frequency and miniaturize the device.